Scientists at the Voronezh State University (VSU) in Central Russia have developed new magnetic nanostructured materials which could be used to make next gen memory devices.

The VSU team is said to have aimed to develop Si-Me based nanostructured materials “with an optical magnetization reversal effect” to come up with new memory components.

As a result of research, the team is reported to have developed materials that are expected to enable “ultra-high speed,” an improvement that stems from an innovative method of storing data no devices available today currently use. Immediate markets for the new materials include photonics, microsystem instrumentation, and memory devices.

VSU is one of Russia’s largest universities, running 18 departments with as many as 20,000+ students from 75 Russian regions. More than a thousand foreign students from 80 countries study there every year, with a total of about 15,000 from 141 foreign countries trained in Voronezh over the past 50 years.